METHOD FOR THE PRODUCTION OF III-V LASER COMPONENTS

摘要

The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved, whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN layer is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.