| 摘要 |
<p>The invention relates to micro and nanoelectronics and can be used for developing super high-speed integral circuits. The inventive field-effect transistor is distinguished from all known analogous devices by the high-speed performance and the ease of productibility thereof. The inventive device is characterised by the unique structural design thereof and a drain diode which is embodied in the form of a Schottky barrier which is transformed into a tunnel transparent barrier under the action of the electric field of a gate. Said field-effect transistor can be easily produced according to a standard technology.</p> |
