| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of effectively removing mixed gas residues of a wafer surface. CONSTITUTION: A dry etching process is performed on a polycrystalline silicon layer(14) by using mixed gas of CF4 and O2. At this time, the polycrystalline silicon layer is formed at the upper portion of a substrate(11). An He plasma treatment is performed on the resultant structure in the same chamber, in which the dry etching process is carried out, by in-situ. Then, the resultant structure is unloaded from the chamber to the outside. Preferably, a cleaning process is performed at the resultant structure by using a single or batch cleaning apparatus after the dry etching process.
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