| 发明名称 |
Negative differential resistance device |
| 摘要 |
A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
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| 申请公布号 |
US6667490(B2) |
申请公布日期 |
2003.12.23 |
| 申请号 |
US20020279184 |
申请日期 |
2002.10.23 |
| 申请人 |
RAYTHEON COMPANY |
发明人 |
VAN DER WAGT JAN PAUL;KLIMECK GERHARD |
| 分类号 |
G11C5/14;G11C11/38;(IPC1-7):H01L29/06 |
主分类号 |
G11C5/14 |
| 代理机构 |
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