发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A gate electrode is formed on a semiconductor substrate with a gate insulating film interposed therebetween. A channel region composed of a first-conductivity-type semiconductor layer is formed in a region of a surface portion of the semiconductor substrate located below the gate electrode. Source/drain regions each composed of a second-conductivity-type impurity layer are formed in regions of the surface portion of the semiconductor substrate located on both sides of the gate electrode. Second-conductivity-type extension regions are formed between the channel region and respective upper portion of the source/drain regions in contact relation with the source/drain regions. First-conductivity-type pocket regions are formed between the channel region and respective lower portion of the source/drain regions in contact relation with the source/drain regions and in spaced relation to the gate insulating film.
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申请公布号 |
US6667216(B2) |
申请公布日期 |
2003.12.23 |
申请号 |
US20010996932 |
申请日期 |
2001.11.30 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
UMIMOTO HIROYUKI;ODANAKA SHINJI |
分类号 |
H01L21/265;H01L21/336;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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