| 摘要 |
PURPOSE: A short wavelength surface emitting laser device including a DBR(Distributed Bragg Reflector) having a stacked structure of a GaN layer and an air layer and a fabricating method thereof are provided to reduce the number of stacked pairs of DBRs and widen the width of spectrum by using the stacked structure of the GaN layer and the air layer. CONSTITUTION: A short wavelength surface emitting laser device including a DBR having a stacked structure of a GaN layer and an air layer includes a substrate, a buffer layer, a GaN layer, a high-refractive index layer(4), a low-refractive index layer(5), a bottom DBR(10), an active layer(7b), a p-AlGaN layer(7c), an n-AlGaN layer(7a), a cavity(7), a p-GaN contact layer, an n-GaN contact layer, and a top DBR(20). The buffer layer is formed on the substrate. The GaN layer is formed on the buffer layer. The high-refractive index layer(4) is formed on the GaN layer. The low-refractive index layer(5) is formed on the high-refractive index layer. The bottom DBR(10) is formed by stacking the high-refractive index layer and the low-refractive index layer, alternately. The active layer(7b) is formed with a quantum well. The p-AlGaN layer(7c) and the n-AlGaN layer(7a) are formed on and under the active layer. The cavity(7) is formed with the p-AlGaN layer(7c), the n-AlGaN layer(7a), and the active layer(7b). The p-GaN contact layer and the n-GaN contact layer are formed on the p-AlGaN layer(7c) and under the n-AlGaN layer(7a), respectively. The top DBR(20) is formed by stacking the high-refractive index layer and the low-refractive index layer on the p-GaN contact layer.
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