发明名称 |
Techniques to characterize iso-dense effects for microdevice manufacture |
摘要 |
A technique is provided to define a pattern (100) on a substrate (70) that includes a dense region with a number of features (101) and an isolated feature region comprised of at least a part of one of the features (101). The dense feature region has a greater feature density than the isolated feature region. A reference feature (103) is measured at a number of different points relative to the isolated feature region and the dense feature region with a measurement tool (75). An iso-dense effect is determined from these measurements.
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申请公布号 |
US2003232253(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20020175367 |
申请日期 |
2002.06.18 |
申请人 |
LEROUX PIERRE;ZIGER DAVID |
发明人 |
LEROUX PIERRE;ZIGER DAVID |
分类号 |
G01N23/225;G03F1/14;G03F7/20;(IPC1-7):G03F1/00;G21K7/00;G01N23/00 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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