发明名称 Techniques to characterize iso-dense effects for microdevice manufacture
摘要 A technique is provided to define a pattern (100) on a substrate (70) that includes a dense region with a number of features (101) and an isolated feature region comprised of at least a part of one of the features (101). The dense feature region has a greater feature density than the isolated feature region. A reference feature (103) is measured at a number of different points relative to the isolated feature region and the dense feature region with a measurement tool (75). An iso-dense effect is determined from these measurements.
申请公布号 US2003232253(A1) 申请公布日期 2003.12.18
申请号 US20020175367 申请日期 2002.06.18
申请人 LEROUX PIERRE;ZIGER DAVID 发明人 LEROUX PIERRE;ZIGER DAVID
分类号 G01N23/225;G03F1/14;G03F7/20;(IPC1-7):G03F1/00;G21K7/00;G01N23/00 主分类号 G01N23/225
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