| 摘要 |
PURPOSE: A synchronous semiconductor memory device is provided to increase the effective data width at a high frequency by implementing data input/output buffers, data pads and data pins separated into an even number and an odd number. CONSTITUTION: A synchronous semiconductor memory device includes a memory cell array(100), a read circuit, a data output buffer circuit(130_EVEN), a data pads(120_EVEN), an odd number data output buffer circuit(130_ODD) and an odd number data pads(120_ODD). The memory cell array(100) stores data information and the read circuit reads the data from the memory cell array(100). The data output buffer circuit(130_EVEN) receives the even number data among the data read by the read circuit. The data pads(120_EVEN) is electrically connected to the data output buffer circuit(130_EVEN). The odd number data output buffer circuit(130_ODD) receives the odd number data among the data read by the read circuit and the odd number data pads(120_ODD) is electrically connected to the odd number data output buffer circuit(130_ODD).
|
