发明名称 NEW DESIGN STRUCTURES OF AND SIMPLIFIED METHODS FOR FORMING FIELD EMISSION MICROTIP ELECTRON EMITTERS
摘要 Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.
申请公布号 WO02080215(A3) 申请公布日期 2003.12.18
申请号 WO2002US07176 申请日期 2002.03.08
申请人 INTEL CORPORATION 发明人 HUFF, BRETT;MAXIM, MICHAEL;ADIBI-RIZI, FARSHID;KARPENKO, OLEH
分类号 H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址