发明名称 |
Gate electrode doping method for forming semiconductor integrated circuit microelectronic fabrication with varying effective gate dielectric layer thicknesses |
摘要 |
Within a semiconductor fabrication and a method for fabricating the semiconductor fabrication there is provided a series of field effect devices having in a first instance an optional pair of different gate dielectric layer thicknesses, and in a second instance different dopant distribution profiles with respect to a pair of gate electrodes formed upon a pair of gate dielectric layers of a single thickness. The method provides the semiconductor fabrication with multiple gate dielectric layer thicknesses, actual and effective, with enhanced manufacturability and reliability.
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申请公布号 |
US2003232473(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20020161837 |
申请日期 |
2002.06.04 |
申请人 |
TAIWN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YEH LING-YEN;GUO JYH-CHYURN;CHEN IH-CHIN |
分类号 |
H01L21/8234;(IPC1-7):H01L21/823;H01L29/792 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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