METHOD FOR FABRICATING METAL FILM FOR SEMICONDUCTOR INTERCONNECTION

摘要

PURPOSE: A method for fabricating metal film for semiconductor interconnection is provided to prevent oxidation of copper thin film in formation of copper semiconductor interconnection using electrolytic plating. CONSTITUTION: The method comprises a step of preparing a semiconductor substrate formed in a fine pattern; a step of forming a copper thin film(140) all over the surface the semiconductor substrate by putting the semiconductor substrate into a copper electrolytic plating solution and impressing reduction potential to the semiconductor substrate so that copper electrolytic plating is performed on the semiconductor substrate; a substrate flattening step of flatly etching the whole surface of the semiconductor substrate so that only the copper thin film(140) formed on a groove part of the semiconductor substrate is remained; and a thin film forming step of substituting silver for the surface of the remained copper thin film by dipping the flattened semiconductor substrate into a silver substitution solution, wherein the method further comprises a heat treatment step of heat treating the silver thin film(150) formed semiconductor substrate at a nitrogen atmosphere.