发明名称 |
SEMICONDUCTOR LASER WITH REDUCED TEMPERATURE SENSITIVITY |
摘要 |
A quantum dot (QD) laser having greatly reduced temperature sensitivity employs resonant tunnel-injection of carriers into the QDs from a pair of quantum wells (QWs). The carriers are injected through barrier layers. Because the tunnel-injection process is essentially temperature-independent, and because the tunnel-injection of carriers is the dominant source of current through the device, temperature-dependent currents are virtually eliminated, resulting in a device having a temperature-independent threshold current. In an additional device, carriers are injected into QDs from a pair of optical confinement layers (OCLs), either by tunnelling or thermionic emission. Each barrier layer is designed to have a low barrier height for carriers entering the QDs, and a high barrier height for carriers exiting the QDs. As a result, parasitic current from carriers leaving the QDs is greatly reduced, which enables the device to have low temperature sensitivity even without using resonant tunnel-injection and/or QWs. |
申请公布号 |
WO02082602(A3) |
申请公布日期 |
2003.12.18 |
申请号 |
WO2002US06382 |
申请日期 |
2002.02.28 |
申请人 |
THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEWYORK;ASRYAN, LEVON, V.;LURYI, SERGE |
发明人 |
ASRYAN, LEVON, V.;LURYI, SERGE |
分类号 |
H01L29/06;H01S5/00;H01S5/20;H01S5/22;H01S5/32;H01S5/34;H01S5/343 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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