Production of boron-doped silicon wafer, used as substrate for electronic element, e.g. processor or memory element, includes polishing with aqueous alkaline polish containing silica and alkali metal or ammonium polyaminocarboxylate

摘要

In producing boron-doped silicon (Si:B) wafers by dividing Si:B crystal into wafers, machining, wet chemical etching front and back to remove not less than 10 mum Si and continuously polishing at least front, to remove not less than 10 mum Si, with aqueous polish, pH 10-12, containing 0.1-10 wt.% silica (SiO2), polish contains 0.00001-5 wt.% polyaminocarboxylic acid(s) (I) as alkali metal and/or ammonium salt but no added oxidant or amine compounds. An Independent claim is also included for the polish for per se.