Method for predicting the degradation of an integrated circuit performance due to negative bias temperature instability

摘要

A method is provided of correlating integrated circuit NBTI-induced performance degradation to discrete transistor NBTI-induced performance degradation and using that correlation to estimate integrated circuit degradation over time using test results based on a discrete transistor. Because discrete transistors are easier and cheaper to test, the technique described herein makes it easier, faster and cheaper to estimate the degradation of an integrated circuit over time than testing the integrated circuit itself.