| 发明名称 |
Heterojunction semiconductor device and method of manufacturing |
| 摘要 |
A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a current (Ic) through a bottom surface (23) of the trench.
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| 申请公布号 |
US6664574(B2) |
申请公布日期 |
2003.12.16 |
| 申请号 |
US20010945683 |
申请日期 |
2001.09.05 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC |
发明人 |
AZAM MISBAHUL;LOECHELT GARY;COSTA JULIO |
| 分类号 |
H01L21/331;H01L27/082;H01L29/737;(IPC1-7):H01L31/032;H01L31/117 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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