发明名称 Methods of fabricating carrier substrates and semiconductor devices
摘要 A micromachined insulative carrier substrate preferably formed of silicon and a multi-chip module formed from the micromachined substrate. The micromachined substrate is fabricated by forming mesas across the surface of the substrate, forming an insulating layer on the substrate, and forming conductive traces on the insulating layer to route signals between semiconductor dice and/or to external circuitry. A variety of semiconductor dice and/or integrated circuitry-bearing wafer configurations (collectively, "semiconductor elements") may be attached to the semiconductor substrate. Electrical contact between the carrier substrate and semiconductor element is achieved with conductive connectors formed on either the semiconductor element or the carrier substrate. The conductive connectors each preferably make contact with both a portion of the conductive trace extending down the sidewall of the mesa and a portion of the conductive trace on the substrate between the mesas to form a more effective bond. The present invention also includes a stacked configuration. After attachment of semiconductor elements, the carrier substrates can be stacked to form a high density stacked configuration.
申请公布号 US6664130(B2) 申请公布日期 2003.12.16
申请号 US20020210423 申请日期 2002.07.31
申请人 MICRON TECHNOLOGY, INC. 发明人 AKRAM SALMAN
分类号 H01L21/60;H01L23/13;(IPC1-7):H01L21/44;H01L21/50;H01L21/48 主分类号 H01L21/60
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