发明名称 |
Method for resistance memory metal oxide thin film deposition |
摘要 |
A method of forming a multi-layered, spin-coated perovskite thin film on a wafer includes preparing a perovskite precursor solution including mixing solid precursor material into acetic acid forming a mixed solution; heating the mixed solution in air for between about one hour to six hours; and filtering the solution when cooled; placing a wafer in a spin-coating mechanism; spinning the wafer at a speed of between about 500 rpm to 3500 rpm; injecting the precursor solution onto the wafer surface; baking the coated wafer at a temperature of between about 100� C. to 300� C.; annealing the coated wafer at a temperature of between about 400� C. to 650� C. in an oxygen atmosphere for between about two minutes to ten minutes; repeating the spinning, injecting, baking and annealing steps until a perovskite thin film of desired thickness is obtained; and annealing the perovskite thin film at a temperature of between about 500� C. to 750� C. in an oxygen atmosphere for between about ten minutes to two hours. |
申请公布号 |
US6664117(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020256380 |
申请日期 |
2002.09.26 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
ZHUANG WEI-WEI;HSU SHENG TENG;LEE JONG-JAN |
分类号 |
G11C11/56;G11C13/00;H01L27/10;H01L45/00;(IPC1-7):H01L21/00 |
主分类号 |
G11C11/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|