Photoexposure method for facilitating photoresist stripping

摘要

There is first provided a substrate 10 and a target layer 12. There is then formed upon the target layer a patterned positive photoresist layer 14. There is then processed the target layer while employing the patterned positive photoresist layer as a mask layer, to thus form a processed target layer and a processed patterned positive photoresist layer. There is then photoexposed 18 the processed patterned positive photoresist layer to enhance its solubility. Finally, there is then stripped from the processed target layer the photoexposed processed patterned positive photoresist layer while employing a solvent.