| 发明名称 |
Method of manufacturing capacitor |
| 摘要 |
An isolation oxide film (2) has a recess. The bottom of the recess is below the upper surfaces of a P well (21) and an N well (22). A capacitor is provided on the bottom of the recess.
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| 申请公布号 |
US6664162(B2) |
申请公布日期 |
2003.12.16 |
| 申请号 |
US20020202790 |
申请日期 |
2002.07.26 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OKADA MASAKAZU |
| 分类号 |
H01L21/76;H01L21/02;H01L21/822;H01L27/04;H01L27/08;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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