发明名称 |
Semiconductor device, memory system and electronic apparatus |
摘要 |
A semiconductor device having a memory cell including first and second load transistors, first and second driver transistors, and first and second transfer transistors. The semiconductor device includes a first gate-gate electrode layer and a first drain-gate wiring layer. A distance L1 between the edges of the first drain-gate wiring layer and an active region of the first driver transistor is greater than or equal to a distance L2 between the first drain-gate wiring layer and an active region of the first load transistor. This structure provides semiconductor devices in which memory cells having desired characteristics can be readily fabricated. The invention also provides memory systems and electronic apparatuses which include the above semiconductor devices.
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申请公布号 |
US6664603(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020153430 |
申请日期 |
2002.05.21 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KARASAWA JUNICHI;WATANABE KUNIO |
分类号 |
H01L21/3205;H01L21/8244;H01L23/52;H01L27/11;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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