| 摘要 |
PROBLEM TO BE SOLVED: To improve crystallinity of a gallium nitride-based compound semiconductor grown on a buffer layer, and to stably grow the gallium nitride-based compound semiconductor in a good yield. SOLUTION: A crystal of the gallium nitride-based compound semiconductor is grown on the buffer layer by a metal organic compound vapor phase growth method. This method for growing the gallium nitride-based compound semiconductor comprises first growing a polycrystalline buffer layer having the formula: GaXAl1-XN (where, X is >=0.5 and <=1), then raising the temperature to partially crystallize the buffer layer to form a single crystal and growing the gallium nitride-based compound semiconductor containing a carrier in a concentration of 2×1015 (example 6) to 1×1019/cm2 (example 8) by using the partially crystallized buffer layer as a seed crystal. |
