发明名称 SYSTEM FOR CHEMICAL MECHANICAL POLISHING
摘要 <p>PURPOSE: A chemical mechanical polishing apparatus is provided to obtain high rate of throughput of substrates with improved flatness and surface finish of the planarized substrate. CONSTITUTION: A polishing system(10) includes a polishing apparatus(20) adjacent to a wafer loading apparatus(30). Wafers(40) brought to the system in a cassette(42), which is immediately stored in a tub(34) so as to keep the wafers wet. The wafers are individually loaded from the cassette into the wafer polishing apparatus, which polishes them and then returns them to the original cassette or another one in the tub. An unillustrated sliding door in the wall is opened for transfer of wafers between the two apparatus(20,30). The wall may act as the barrier between the clean room containing the wafer loading apparatus(30) and a dirtier area containing the polishing apparatus(20).</p>
申请公布号 KR100412478(B1) 申请公布日期 2003.12.12
申请号 KR20020005152 申请日期 2002.01.29
申请人 APPLIED MATERIALS INC. 发明人 PERLOV ILYA;GANTVARG EUGENE;LEE HARRY Q.;TOLLES ROBERT D.;SHENDON NORM;SOMEKH SASSON
分类号 B24B27/00;B24B37/30;B24B37/34;B24B41/00;B24B53/007;B24B53/017;B24B53/12;B24B57/02;H01L21/00;H01L21/304;H01L21/306;(IPC1-7):H01L21/304 主分类号 B24B27/00
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