| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing short channel phenomenon and the silicon lattice damage of a semiconductor substrate by improving the heat treatment for forming a buffer oxide layer. CONSTITUTION: A gate electrode(108) is formed at the upper portion of a semiconductor substrate(100). The semiconductor substrate includes a well(106). An LDD(Lightly Doped Drain) ion implantation is carried out at the substrate by using the gate electrode as a mask. The concentration of the well is locally increased by carrying out a tilt ion implantation. A buffer oxide layer(130) is formed by carrying out a high temperature oxidation process at a nitrogen gas atmosphere for enclosing the gate electrode. A silicon nitride layer(132) is formed at the upper portion of the buffer oxide layer.
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