METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the bowing phenomenon of an insulating layer without reducing a contact region when carrying out an etching process at the insulating layer for forming a storage node of a capacitor. CONSTITUTION: After forming an insulating layer(41) on a substrate(40), a hard mask insulating layer(43) is formed at the upper portion of the resultant structure. A hard mask is formed by selectively etching the hard mask insulating layer using a photoresist layer as an etching mask. After partially etching the insulating layer by using the hard mask as an etching mask, an etching stop layer(47) is formed along the profile of the resultant structure for preventing the sidewall of the insulating layer from being etched. An opening portion is formed by selectively carrying out an etching process at the resultant structure. Then, a storage node(49) is selectively formed at the resultant structure for contacting the opening portion.