发明名称 Programming circuit and method having extended duration programming capabilities
摘要 An isolation circuit for coupling a large programming voltage from an external terminal to a circuit ground node includes an NMOS isolation transistor through which the programming voltage is coupled, and a charge pump that applies a voltage having at least the magnitude of the programming voltage to the gate of the NMOS transistor. As a result, the NMOS transistor is able to pass the full magnitude of the programming voltage to the circuit ground node. The charge pump can generate a voltage having a sufficient magnitude with only a single charge pump stage because the charge pump uses the relatively large programming voltage as the starting point for the voltage boosting process.
申请公布号 US2003227294(A1) 申请公布日期 2003.12.11
申请号 US20020165666 申请日期 2002.06.06
申请人 MECIER RICHARD A.;INGALLS CHARLES L. 发明人 MECIER RICHARD A.;INGALLS CHARLES L.
分类号 G11C5/14;G11C11/4074;G11C17/18;H02M3/07;H03K17/06;(IPC1-7):H03K19/173 主分类号 G11C5/14
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