发明名称 Process for forming semiconductor layer of micro-and nano-electronic devices
摘要 A process comprising: creating a dispersion including: (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material; and solution coating using the dispersion to form a semiconductor layer of an electronic device, wherein the semiconductor layer comprises the organic semiconductor material and the binder resin.
申请公布号 US2003227014(A1) 申请公布日期 2003.12.11
申请号 US20020167683 申请日期 2002.06.11
申请人 XEROX CORPORATION. 发明人 MURTI DASARAO K.;ONG BENG S.;DUFF JAMES M.
分类号 H01L51/05;H01L29/76;H01L29/786;H01L35/24;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L29/04;H01L29/94;H01L31/036 主分类号 H01L51/05
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