发明名称 |
Process for forming semiconductor layer of micro-and nano-electronic devices |
摘要 |
A process comprising: creating a dispersion including: (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material; and solution coating using the dispersion to form a semiconductor layer of an electronic device, wherein the semiconductor layer comprises the organic semiconductor material and the binder resin.
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申请公布号 |
US2003227014(A1) |
申请公布日期 |
2003.12.11 |
申请号 |
US20020167683 |
申请日期 |
2002.06.11 |
申请人 |
XEROX CORPORATION. |
发明人 |
MURTI DASARAO K.;ONG BENG S.;DUFF JAMES M. |
分类号 |
H01L51/05;H01L29/76;H01L29/786;H01L35/24;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L29/04;H01L29/94;H01L31/036 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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