METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING AMORPHOUS METAL GATE ELECTRODE

摘要

PURPOSE: A method for manufacturing a semiconductor device having an amorphous metal gate electrode is provided to be capable of improving the uniformity of gate resistivity and easily carrying out an etching process at the amorphous metal gate electrode. CONSTITUTION: After forming a gate isolating layer(22) on a semiconductor substrate(21), a metal layer is formed at the upper portion of the resultant structure. An inert ion implantation process is carried out at the metal layer for transforming the metal layer into amorphous metal layer. A gate electrode is formed by selectively etching the amorphous metal layer. Then, a source/drain region are formed at both sides of the gate electrode in the semiconductor substrate.