Method for metal patterning and improved linewidth control

摘要

Method for forming metal lines during the fabrication of an integrated circuit including the step of stripping a photoresist layer to expose a patterned antireflective coating layer prior to performing a metal etch. A semiconductor substrate is prepared with a metal layer for the formation of metal lines. The photoresist is exposed and developed after being deposited on an antireflective coating that has been deposited on a composite metal stack. The method includes etching the antireflective coating, stripping the photoresist, etching a composite metal stack to form the metal lines, removing the antireflective coating and cleaning the metal stack. A device at this stage of manufacture is also disclosed.