ISOLATION LAYER OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: An isolation layer of a semiconductor device and a method for forming the same are provided to prevent generation of voids by filling a silicon oxide layer into a trench having high aspect ratio using thermal oxidation processing. CONSTITUTION: A trench mask pattern is formed on a semiconductor substrate(100) by sequentially stacking a pad oxide pattern(110) and a hard mask pattern(120). A trench is formed by selectively etching the exposed substrate using the trench mask pattern. A trench thermal oxide layer(140,150) is filled into the trench by thermal oxidation of the inner walls of the trench. The trench mask pattern is then removed.