| 摘要 |
An active matrix type liquid crystal display device according to the invention includes in each pixel a semiconductor layer of a thin film transistor, a first insulating film formed on the semiconductor layer, a gate line formed on the first insulating film, a second insulating film formed on the gate line, and a drain line formed on the second insulating film. The bottom side of the gate line is opposed to the semiconductor layer with the first insulating film interposed therebetween, and the top side of the gate line is covered with a metal electrode formed on the second insulating film by the same process as the drain line, whereby leak electric fields from the gate line are shielded. Particularly in an IPS type liquid crystal display device using low temperature poly silicon TFTs is constructed in the above-described manner, a wide viewing angle and a bright display image are obtained.
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