发明名称 |
Ferroelectric memory device e.g. ferroelectric RAM, simultaneously activates plate line after writing data into bit line, so that data stored in memory cell is transmitted to bit line |
摘要 |
<p>A controller simultaneously activates a plate line, after writing data into a bit line, so that the data stored in the memory cell is transmitted to the bit line. An independent claim is also included for ferroelectric memory device writing method.</p> |
申请公布号 |
DE10323052(A1) |
申请公布日期 |
2003.12.11 |
申请号 |
DE2003123052 |
申请日期 |
2003.05.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, BYUNG-GIL;KIM, KI-NAM |
分类号 |
G11C11/22;(IPC1-7):G11C11/22;G11C7/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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