发明名称 Ferroelectric memory device e.g. ferroelectric RAM, simultaneously activates plate line after writing data into bit line, so that data stored in memory cell is transmitted to bit line
摘要 <p>A controller simultaneously activates a plate line, after writing data into a bit line, so that the data stored in the memory cell is transmitted to the bit line. An independent claim is also included for ferroelectric memory device writing method.</p>
申请公布号 DE10323052(A1) 申请公布日期 2003.12.11
申请号 DE2003123052 申请日期 2003.05.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, BYUNG-GIL;KIM, KI-NAM
分类号 G11C11/22;(IPC1-7):G11C11/22;G11C7/22 主分类号 G11C11/22
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