| 摘要 |
<p>1,193,113. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 26 June, 1967 [29 June, 1966], No. 29402/67. Heading H1K. The contact 51 to the emitter zone 43 of a planar transistor passes through an aperture 50 in an insulating layer 45 and extends over that layer to provide a substantial area within which a lead-out conductor 52 may be attached. This area it to one side of the emitter zone and the extent of its spread over the insulation is such that it nowhere extends beyond the line of contact of the collector-base junction 46 with the semi-conductor surface 44. Thus the extended contact 51 is insulated from the collector zone 41 by both the insulation 45 and the base zone 42. This arrangement minimizes the emitter-collector breakdown voltage, and so makes the transistor particularly suitable for grounded base operation. The base contact 54 also occupies an extended area wholly within the perimeter defined by the collector-base junction. It may, as shown, extend over the insulation in the same way as the emitter contact, or it may lie wholly within an extended area aperture in the insulation. The Specification includes a detailed description of a manufacturing process resulting in a transistor generally similar to that of Fig. 5, the various stages of the process being depicted in Figs. 7 to 16 (not shown). In a modified construction shown in plan in Fig. 17, the base zone perimeter 87 is dumb-bell shaped and the insulation contains two apertures 82 for contacting the base and one, 81, for contacting the emitter. The extended area emitter and base contacts, 83 and 84 respectively, interdigitate as shown.</p> |
