MOS type solid-state imager and manufacturing method thereof

摘要

A photodiode and a read gate are formed within an element region. A p<+ >type punch-through preventing region is not formed immediately under an n-type signal accumulating region of a photodiode. The n-type signal accumulating region is formed within a p-type semiconductor substrate. The p<+ >type punch-through preventing region is formed over the entire element region. The p<+ >type punch-through preventing region is also formed immediately under an insulative isolation layer in order to prevent punch-through between elements. A p<+ >type punch-through stopper is formed immediately under an n-type first semiconductor region.