| 摘要 |
A method of forming openings on a semiconductor wafer comprising an initial step of providing a first film layer over the semiconductor wafer. A first opening in the first film layer is created by transferring an image of the first opening from a photoresist layer into the first film layer using an etching procedure. The first opening includes horizontal and vertical surfaces and has first width and height dimensions. After removing the photoresist layer, a second film layer is deposited over the first film layer and the opening such that the opening has a second width and height dimension which is less than the first width and height dimension. The second film layer is then anisotropically etched from the horizontal surface of the first film layer, and the horizontal surface of the opening such that the opening includes the first height dimension and the second width dimension. The steps of providing the image, creating the first opening, removing the photoresist layer, depositing the second film layer, and anisotropically etching are repeated to provide a second opening in the first film layer. The second opening is adjacent to and a predetermined distance from the first opening, and the first and second openings have different width dimensions.
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