发明名称 Partial selection of passive element memory cell sub-arrays for write operation
摘要 A memory array is subdivided into many sub-arrays which are separately selectable in groups, with each group containing one or more sub-arrays. The various data bits of a data set are physically spread out and mapped into a large number of associated sub-array groups. All the associated sub-array groups are preferably selected during a read cycle to simultaneously read the various bits of the data set, but when writing the data set, a smaller number of sub-array groups are activated during each of several write cycles to simultaneously write only a portion of the data set. Consequently, the read bandwidth remains high and is driven by the number of bits simultaneously read, but the write power is reduced since during each write cycle fewer bits are written. Such a memory array is particularly advantageous with passive element memory cells, such as those having antifuses.
申请公布号 US6661730(B1) 申请公布日期 2003.12.09
申请号 US20000748649 申请日期 2000.12.22
申请人 MATRIX SEMICONDUCTOR, INC. 发明人 SCHEUERLEIN ROY E.;CROWLEY MATTHEW P.
分类号 G11C17/16;G11C17/18;(IPC1-7):G11C8/00 主分类号 G11C17/16
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