发明名称 |
Supply voltage generating circuit and semiconductor memory device using same |
摘要 |
A semiconductor memory device with a supply voltage generating circuit which can fine-tune its output voltages according to the frequency of a given clock signal. A reference voltage generator produces a plurality of different reference voltages. A clock signal receiver accepts a clock signal and supplies it to a period measurement unit for measurement of the cycle period of the given clock signal. A selector selects one of the produced reference voltages according to the clock period measured by the period measurement unit. A supply voltage generator produces a supply voltage corresponding to the selected reference voltage.
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申请公布号 |
US6661728(B2) |
申请公布日期 |
2003.12.09 |
申请号 |
US20020061304 |
申请日期 |
2002.02.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
TOMITA HIROYOSHI;KAMATA SHINNOSUKE |
分类号 |
G11C11/407;G05F3/24;G11C5/14;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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