发明名称 Supply voltage generating circuit and semiconductor memory device using same
摘要 A semiconductor memory device with a supply voltage generating circuit which can fine-tune its output voltages according to the frequency of a given clock signal. A reference voltage generator produces a plurality of different reference voltages. A clock signal receiver accepts a clock signal and supplies it to a period measurement unit for measurement of the cycle period of the given clock signal. A selector selects one of the produced reference voltages according to the clock period measured by the period measurement unit. A supply voltage generator produces a supply voltage corresponding to the selected reference voltage.
申请公布号 US6661728(B2) 申请公布日期 2003.12.09
申请号 US20020061304 申请日期 2002.02.04
申请人 FUJITSU LIMITED 发明人 TOMITA HIROYOSHI;KAMATA SHINNOSUKE
分类号 G11C11/407;G05F3/24;G11C5/14;(IPC1-7):G11C7/00 主分类号 G11C11/407
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