TRATTAMENTO TERMICO RAPIDO CON ARGON/AMMONIACA PER WAFER DI SILICIO WAFER DI SILICIO FABBRICATI IN TALE MODO E CAMERE DI CRESCITA CZOCHRALSK,申请号IT2002MI01248-传众专利搜索

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发明名称	TRATTAMENTO TERMICO RAPIDO CON ARGON/AMMONIACA PER WAFER DI SILICIO WAFER DI SILICIO FABBRICATI IN TALE MODO E CAMERE DI CRESCITA CZOCHRALSK
摘要
申请公布号	ITMI20021248(A1)	申请公布日期	2003.12.09
申请号	IT2002MI01248	申请日期	2002.06.07
申请人	SAMSUNG ELECTRONICS CO LTD.	发明人	PARK JEA-GUN
分类号	H01L	主分类号	H01L
代理机构		代理人
主权项
地址

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