OPTICAL RECEIVER AND FABRICATING METHOD THEREOF

摘要

PURPOSE: An optical receiver is provided to improve reception sensitivity and an amplification characteristic by integrating a waveguide-type optical detector and a n+InP/p+InGaAs/n-InGaAs/n+InGaAs heterojunction bipolar transistor(HBT) on a half-insulated substrate wherein a pn junction is formed in the waveguide-type optical detector and the HBT amplifies an electrical signal converted by the optical detector. CONSTITUTION: A p+InGaAs layer(202), a p+InAlAs layer(203), an n+InAlAs layer(204) and an n+InGaAs sub-collector layer(205) are stacked in a predetermined region on the half-insulated InP substrate(201). An n-InGaAs layer and a p+InGaAs base layer are stacked in a predetermined region on the n+InGaAs sub-collector layer to transfer high speed current. An n+InP emitter layer and an n+InGaAs ohmic layer are stacked in a predetermined region on the p+InGaAs base layer. An emitter electrode(212) is formed on the n+InGaAs ohmic layer. A base electrode(213) is formed in a predetermined region on the p+InGaAs base layer. A collector electrode(214) is formed in a predetermined region on the n+InGaAs sub-collector layer.