| 摘要 |
PURPOSE: An atomic layer deposition method is provided, which is suitable for preventing deterioration of deposition ratio generated when supplying a source one time during one period of time. CONSTITUTION: The atomic layer deposition method of oxide thin film is characterized in that an oxide thin film (MO) is deposited by alternately supplying alkoxide based source £MOR| and halogen based source £MX|, wherein the atomic layer deposition method of oxide thin film comprises steps of loading a substrate into chamber, and supplying the alkoxide based source into the substrate loaded chamber so that the alkoxide based source is adsorbed onto the substrate; a step of purging non-reacted alkoxide based source and reaction byproduct; a step of supplying the halogen based source into the chamber so that the halogen based source is reacted with the alkoxide based source adsorbed onto the substrate; and a step of purging the non-reacted halogen based source and reaction byproduct, wherein the atomic layer deposition method of oxide thin film comprises steps of loading a substrate into chamber, and supplying the halogen based source into the substrate loaded chamber so that the halogen based source is adsorbed onto the substrate; a step of purging non-reacted halogen based source and reaction byproduct; a step of supplying the alkoxide based source into the chamber so that the alkoxide based source is reacted with the halogen based source adsorbed onto the substrate; and a step of purging the non-reacted alkoxide based source and reaction byproduct.
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