| 摘要 |
<P>PROBLEM TO BE SOLVED: To heat a wafer to a high temperature of ≥200°C with high heat uniformity under high vacuum conditions. <P>SOLUTION: The wafer chucking heating apparatus has: a substrate composed of a ceramics sintered compact; a resistance electrical heating element buried within the substrate; an electrode formed on one main surface of the substrate; and a dielectric layer composed of a ceramics sintered compact formed on one main surface side to cover the electrode, and the electrode has a planar porous form and is bonded with the substrate and the dielectric layer without a gap. A coulombic force is generated between a wafer and the ceramics dielectric layer to attach the wafer to a wafer-attaching surface, the resistance electrical heating element is energized for generating heat from the wafer-attaching surface, and the attached wafer is heated. <P>COPYRIGHT: (C)2004,JPO |
