| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and a semiconductor manufacturing apparatus whereby an adequate annealing temperature is obtained as the countermeasure of a junction leak, and the aggregation and deviation of a silicide substance is prevented. SOLUTION: The manufacturing method of a semiconductor device includes a process for covering the whole surface of the upper portion of a gate electrode 13 and heavily doped regions 16 of its source/drain with a metal film contributing to silicification, a process for covering the metal film with a first cap metal film, a process for forming a silicide layer (20) through a first rapid thermal annealing process, a process for removing metals subjected to no reaction therefrom, a process for forming a second cap metal film by sputtering, and a secondary rapid thermal annealing process for stabilizing thereafter the silicide layer by performing again an annealing process. Thereby, low-resistance silicide layers (CoSi<SB>2</SB>films) 22 can be formed only in desired regions. COPYRIGHT: (C)2004,JPO |
