| 摘要 |
A semiconductor device having a semiconductor substrate (11) or an insulation layer (58), an integrated circuit on each side of the semiconductor substrate (11) or an insulation layer (58), and a path for an ultrasound signal connecting both integrated circuits. The path is realized through the semiconductor substrate (11) or insulation layer (58) by providing an ultrasonic transducer on each side of the semiconductor substrate (11) or an insulation layer (58). A plurality of paths may be provided in the same semiconductor substrate (11) or an insulation layer (58) without crosstalk by transmitting ultrasound signals having different frequencies through the respective paths. The paths may be one-way or two-way. The ultrasonic transducers (17a to 17d) each contain a piezoelectric material, and the thickness of the piezoelectric material (14a to 14d) in the ultrasonic transducer at least on a receiver side in each path is such that the resonant frequency of the ultrasonic transducer corresponds to the frequency of the ultrasound signal transmitted through the path. A plurality of paths transmitting an ultrasound signal having the same frequency may be provided between at least one point on one side and more than one point on the other side, through the semiconductor substrate (11) or insulation layer (58), when each of the paths is used in a time-sharing manner. <IMAGE> |
