| 摘要 |
<P>PROBLEM TO BE SOLVED: To accurately measure electric characteristics of a semiconductor device by a probe needle and reliably form a bump electrode on the semiconductor device after measuring the electric characteristics. <P>SOLUTION: An electrode pad 2 is formed on a semiconductor substrate 1. The probe needle is contacted with a gold layer 5 formed on the electrode pad 2 to measure the electric characteristics of the semiconductor device. Thereafter, a bump electrode such as a gold stud bump 81 or the like is formed on the gold layer 5 to which the probe needle 6 is contacted. When a solder ball is used as a bump electrode, a barrier metal and a gold layer are sequentially formed on the electrode pad, and thereafter, the probe needle is contacted with the gold layer to measure the electric characteristics, and then, the solder ball is formed on the gold layer. <P>COPYRIGHT: (C)2004,JPO |
