| 摘要 |
PROBLEM TO BE SOLVED: To provide a decoupling thin film capacitor used in a feeder line requiring a quick power supply to a semiconductor integrated circuit in which dielectric breakdown is retarded as compared with a prior art even when an excess pulse field is applied and dielectric deterioration due to the migration of mobile charges, e.g. an oxygen defect, is retarded. SOLUTION: A lower electrode layer 2, a floating electrode layer 8 not connected with an upper electrode layer 4, and a thin film dielectric layer 9 doped with a donor are interposed in a thin film dielectric layer 3 sandwiched by the lower electrode layer 2 and the upper electrode layer 4. COPYRIGHT: (C)2004,JPO
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