| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical DMOS element and a manufacturing method of the element. <P>SOLUTION: A drift region 106 where first conductive impurity is doped is formed on a whole face of a substrate 102. A plurality of main body regions 126 which are formed in the drift region 106 and in which second conductive impurities are doped are formed. In the main body region 126, a source region 130 where the first conductive impurities are doped in high concentration is adjacent to a source region 130, and bulk regions 136 where the second conductive impurities surrounded by the source regions 130 are formed. A first conductive well 110 surrounding at least a part of a plurality of the main body regions 126 is formed in the drift region 106. An edge of the well 110 is overlapped with an outermost angle main body region, and it does not include a bending part of the outermost angle main body region. Thus, a method for partially improving a concentration of the drift region 106 by using the well 110 is used, and on-resistance Ron can be improved. Then, a high yield voltage characteristic can be maintained. <P>COPYRIGHT: (C)2004,JPO |
