| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable and easy-to-manufacture semiconductor element. SOLUTION: The ratio of Ge in the composition of SiGe fine particles 1124 increases continuously from a position contiguous to a p-type silicon substrate 1121 toward a position contiguous to an SiO<SB>2</SB>film 1126. The band gap decreases in the order of silicon fine particles A, silicon fine particles B, silicon fine particles C, and silicon fine particles D. At the same time, electron affinity increases and the sum of the electron affinity and the band gap decreases. Consequently, the barrier height between respective particles in the charge retaining area decreases as the distance to the semiconductor substrate decreases. COPYRIGHT: (C)2004,JPO
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