| 发明名称 |
Metal-insulator-semiconductor component, especially power MOSFET, includes second drain region also serving as drift region |
| 摘要 |
The second drain region (16) also serves as a drift region (11). It is located close to the control electrode (19) and on the opposite side to the source region (14). It extends from the surface of the base region (12) to the first drain region (15). An Independent claim is included for the method of manufacture.
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| 申请公布号 |
DE10322594(A1) |
申请公布日期 |
2003.12.04 |
| 申请号 |
DE2003122594 |
申请日期 |
2003.05.20 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
NAGAOKA, TATSUJI;FUJIHIRA, TATSUHIKO;ONISHI, YASUHIKO |
| 分类号 |
H01L29/06;H01L29/417;H01L29/78;(IPC1-7):H01L29/78;H01L21/336 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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