Method for reducing dimensions between patterns on a photomask

摘要

A method for manufacturing a photomask is provided. A transparent substrate is provided and a mask layer is formed thereon. A resist layer is formed on the mask layer and then patterned and defined to define a critical dimension of the photomask. A third layer is deposited over the patterned and defined resist layer to decrease the critical dimension of the photomask. And the third layer and the mask layer are etched afterwards.