| 摘要 |
The present invention provides a semiconductor memory device whose circuit area is comparatively small and that improves holding characteristics of data in a memory cell. In a word line voltage generator, a voltage Vdd3 of a second power source that is higher than a voltage Vdd of a first power source supplied to the memory cell is applied to a first operational amplifier circuit and a reference voltage generating circuit, and the reference voltage generating circuit generates a voltage that is higher, by a voltage generated through a diode connection of a p-channel transistor, than the voltage proportional to the voltage Vdd as a first reference voltage Vref, and the first operational amplifier circuit outputs a voltage equal to the first reference voltage Vref as a word line drive voltage Vwl. Thus, a leakage current when the memory cell is off can be reduced, without requiring a charge pump circuit or the like.
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