| 摘要 |
<p>An insulating film (150) is formed of SiO2 on a p-type layer (106). A multiple thick film positive electrode (120) of a metal film formed by metal vaporization is provided on a portion of the p-type layer (106) which is exposed through a window opened at the generally central portion of the insulating film (150) on the insulating film (150). The thickness of the insulating film (150) is 1/4 of the emission wavelength though generally the thickness of the insulating film (150) is an odd integral multiple of 1/4 of the emission wavelength in the medium. Therefore, the directivity of the light emitted along the optical axis is improved by interference.</p> |
